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RB500V-40
Diodes
Schottky barrier diode
RB500V-40
!Applications Low current rectification !External dimensions (Units : mm)
CATHODE MARK
CATHODE MARK
!Features 1) Small surface mounting type. (UMD2) 2) Low IR. (IR=70nA Typ.) 3) High reliability.
2.50.2
1.70.1
2.50.2
1.70.1
2
0.30.05 1.250.1 0.7 +0.2 -0.1 0.1 +0.1 -0.05
2
0.30.05 1.250.1 0.7 +0.2 -0.1 0.1 +0.1 -0.05
!Construction Silicon epitaxial planar
ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323
There are two different markings.
!Absolute maximum ratings (Ta = 25C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 45 40 0.1 1 125 -40~+125
Unit V V A A
C C
!Electrical characteristics (Ta = 25C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. - - - Typ. - - 6.0 Max. 0.45 1 - Unit V A pF IF=10mA VR=10V VR=10V, f=1MHz Conditions
Note) ESD sensitive product handling required.
RB500V-40
Diodes
!Electrical characteristic curves (Ta = 25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1000
10000
REVERSE CURRENT : R (A)
100
FORWARD CURRENT : IF (mA)
1000 100 10 1
25C 125C
100
10
12 5 C 75 C
75C
10
C 25
1
-25 C
0.1 0.01 0
0.1 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
20
30
40
1 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
100
Io CURRENT (%)
80 60 40 20 0 0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (C)
Fig. 4 Derating curve (mounting on glass epoxy PCBs)

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